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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4064 DESCRIPTION *Low Collector Saturation Voltage : VCE(sat)= 0.35V(Max)@ IC=6A *Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V (Min) *Complement to Type 2SA1567 APPLICATIONS *Designed for use in DC motor driver and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 50 V 50 V 6 V 12 A 3 A 35 W .cn mi e IC Collector Current-Continuous IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4064 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0 50 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A B 0.35 V A A ICBO Collector Cutoff Current VCB=50V; IE= 0 100 IEBO hFE Emitter Cutoff Current VEB= 6V; IC= 0 IC= 6A ; VCE= 1V 50 10 DC Current Gain fT Current-Gain--Bandwidth Product IE= -0.5A ; VCE= 12V COB Output Capacitance Switching times ton tstg tf Turn-on Time Storage Time Fall Time w w scs .i w IE= 0 ; VCB= 12V;ftest= 1.0MHz .cn mi e 40 MHz 180 pF 0.6 s s s IC= 6A ; IB1= -IB2= 0.12A RL= 4;VCC= 24V 1.4 0.4 isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC4064 w w scs .i w .cn mi e isc Websitewww.iscsemi.cn |
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